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Biography
Valeri Ligatchev was born in Russia in 1959. He had obtained his MS, PhD and Doctor of Science (equivalent of Habilitation) degrees in Moscow Power Engineering Institute (MPEI, Russia) in years 1982, 1988 and 1998, respectively. In MPEI he worked as a researcher (senior researcher) and lecturer from 1988 till 1999. Since 1999 he is working (till 2014) and living in Singapore: in Nanyang Technological University, (1999 – 2005), NanoScience Innovation Pte. Ltd. (2005 – 2006), and Institute of High Performance Computing, A*STAR, (2006 – 2014). He became an author (co-author) of 82 referred journal articles, 104 conference abstracts and proceeding articles as well as of 7 books and book chapters. He is a member of The Electrochemical Society since 2007. His name had been included in 2011 Edition of Marquis Who's Who in the World.
His areas of scientific interest and expertise comprise of experimental, computational and theoretical investigations on electronic, optical, vibrational, relaxation time and defect states spectra as well as thermal properties of various (predominantly spatially non-homogeneous) semiconductors (including low-dimensional ones), insulators and even superconductors, including nominally undoped and heavily doped polycrystalline and nano-crystalline diamond(s), flakes of two-dimensional semiconductors, silicon-germanium ‘quantum dots’, silicon micro- and nano-wires and ‘molecular wires’, amorphous hydrogenated silicon-based semiconductor films, porous ‘low-k’ organic and inorganic insulating layers, as well as ceramic insulators with ‘gigantic dielectric response’, GDR.